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HY5N60
600V N-Channel MOSFET
Description
600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Excellent Gate Charge: 14nC(Typ) Extended Safe Operating Area Lower RDS(ON) : 2 Ω(Typ.) @VGS =10V 100% Avalanche Tested HY5N60 BVDSS = 640 RDS(on) = 2 Ω ...
HOOYI
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