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2SK211

Part Number	2SK211
Manufacturer	Xiao sheng Elctronic
Description	N-channel MOSFET
Published	Jul 28, 2015
Detailed Description	Silicon N Channel Junction FETs LH03 series of products interconvertible 2SK211 Xiaosheng D Symbol Applications For ch...
Datasheet	2SK211 PDF File

Overview

Silicon N Channel Junction FETs LH03 series of products interconvertible 2SK211 Xiaosheng D Symbol Applications For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC, electronic switch.
SG Packag Electrical characteristics (Ta=25℃) 1-Drain 2-Gate 3-Source SOT-23 Parameter Symbl Conditions min typ max unit Drain to Source Voltage BVDS IDS= 1uA 20 V Gate to Drain ( Source) Voltage VGD(S) IGS= -1uA -20 V Gate to Source Cut-off Voltage VGS(off) VDS=10V IDS=1uA -0.
3 -2.
5 V Gate to Source Reverse Current IGSS VDS=0VVGS=- 10V -1.
0 nA Saturation Drain Current IDSS VDS=0V VGS=0V 1.
2 12 mA Forward transfer admittance |Yfs| VDS=10V VGS=0V 2.
...

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