2SK4150
Silicon N Channel MOS FET High Speed Power Switching
Features
Capable of 2.5 V gate drive Low drive current Low on-resistance
RDS(on) = 4.0 typ. (at ID = 0.2 A, VGS = 4 V, Ta = 25°C)
Outline
RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1))
321
G
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain c...
