GT60N321. 60N321 Datasheet

60N321 GT60N321. Datasheet pdf. Equivalent

Part 60N321
Description GT60N321
Feature GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switc.
Manufacture Toshiba Semiconductor
Datasheet
Download 60N321 Datasheet



60N321
GT60N321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60N321
High-Power Switching Applications
Fourth Generation IGBT
Unit: mm
FRD included between emitter and collector
Enhancement mode type
High speed IGBT : tf = 0.25 μs (typ.) (IC = 60 A)
FRD : trr = 0.8 μs (typ.) (di/dt = 20 A/μs)
Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
symbol
Rating
Unit
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
DC
1 ms
Emitter-Collector
Forward Current
DC
1 ms
Collector Power Dissipation
(Tc = 25°C)
Junction Temperature
Storage Temperature
Screw Torque
VCES
VGES
IC
ICP
IECF
IECFP
PC
Tj
Tstg
1000
±25
60
120
15
120
170
150
55 to 150
0.8
V
V
A
A
W
°C
°C
Nm
JEDEC
JEITA
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Equivalent Circuit
Marking
Collector
Gate
Emitter
TOSHIBA
GT60N321
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1 2010-01-07



60N321
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate Leakage Current
Collector Cut-off Current
Gate-Emitter Cut-off Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Rise Time
Turn-on Time
Switching Time Fall Time
Turn-off Time
Symbol
Test Condition
IGES
VGE = ±25 V, VCE = 0
ICES
VCE = 1000 V, VGE = 0
VGE (OFF) IC = 60 mA, VCE = 5 V
VCE (sat) (1) IC = 10 A, VGE = 15 V
VCE (sat) (2) IC = 60 A, VGE = 15 V
Cies VCE = 10 V, VGE = 0, f = 1 MHz
tr
ton 51 Ω
tf 15 V
0 600 V
toff 15 V
Emitter-Collector Forward Voltage
Reverse Recovery Time
Thermal ResistanceIGBT
Thermal ResistanceDiode
VECF
trr
Rth(j-c)
Rth(j-c)
IEC = 15 A, VGE = 0
IF = 15 A, VGE = 0, di/dt = −20 A/μs
GT60N321
Min Typ. Max Unit
⎯ ⎯ ±500 nA
⎯ ⎯ 1.0 mA
3.0 6.0 V
1.6 2.3
2.3 2.8
V
V
4000
pF
0.23
0.33
0.25 0.40 μs
0.70
1.2 1.9
V
0.8 2.5 μs
⎯ ⎯ 0.74 °C/W
⎯ ⎯ 4.0 °C/W
2 2010-01-07





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