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CEM8958A
Dual Enhancement Mode Field Effect Transistor
Description
CEM8958A Dual Enhancement Mode Field Effect
Transistor
(N and P Channel) PRELIMINARY FEATURES 30V, 6.8A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 42mΩ @VGS = 4.5V. -30V, -4.8A, RDS(ON) = 60mΩ @VGS = -10V. RDS(ON) = 85mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS comp...
CET
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