schottky barrier. BYV133 Datasheet

BYV133 barrier. Datasheet pdf. Equivalent

Part BYV133
Description Rectifier diodes schottky barrier
Feature Philips Semiconductors Rectifier diodes Schottky barrier Product specification BYV133, BYV133B seri.
Manufacture Philips
Datasheet
Download BYV133 Datasheet

Philips Semiconductors Rectifier diodes Schottky barrier Pr BYV133 Datasheet
Philips Semiconductors Rectifier diodes Schottky barrier Pr BYV133B Datasheet
Philips Semiconductors Product specification Rectifier dio BYV133F Datasheet
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Philips Semiconductors Product specification Rectifier dio BYV133F-40 Datasheet
Philips Semiconductors Product specification Rectifier dio BYV133F-45 Datasheet
Recommendation Recommendation Datasheet BYV133 Datasheet




BYV133
Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
BYV133, BYV133B series
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
SYMBOL
a1
1
k2
a2
3
QUICK REFERENCE DATA
VR = 35 V/ 40 V/ 45 V
IO(AV) = 20 A
VF 0.6 V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting
plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The BYV133 series is supplied in the SOT78 conventional leaded package.
The BYV133B series is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
PIN DESCRIPTION
1 anode 1 (a)
tab
tab
2 cathode (k) 1
3 anode 2 (a)
2
tab cathode (k)
1 23
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Tmb 120 ˚C
BYV133-
BYV133B-
-
-
-
IO(AV)
IFRM
IFSM
IRRM
Tj
Tstg
Average rectified forward
current (both diodes
conducting)
Repetitive peak forward
current (per diode)
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
square wave; δ = 0.5;
Tmb 120 ˚C
square wave; δ = 0.5;
Tmb 120 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
-
-
-
-
-
-
- 65
1. It is not possible to make connection to pin 2 of the SOT404 pckage.
35
35
35
35
35
MAX.
40
40
40
40
40
20
20
100
110
1
150
175
UNIT
45
45
45 V
45 V
45 V
A
A
A
A
A
˚C
˚C
May 1998 1 Rev 1.100



BYV133
Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
BYV133, BYV133B series
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
SOT78 package in free air
SOT404 package, pcb mounted, minimum
footprint, FR4 board
MIN.
-
-
-
-
TYP.
-
-
60
50
MAX. UNIT
2.6 K/W
1.6 K/W
- K/W
- K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
VF Forward voltage per diode IF = 7 A; Tj = 125˚C
IF = 20 A
IR Reverse current per diode VR = VRWM
VR = VRWM; Tj = 100˚C
Cd
Junction capacitance per
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
diode
MIN.
-
-
-
-
-
TYP.
0.5
0.84
0.1
10
210
MAX. UNIT
0.6 V
0.94 V
0.8 mA
15 mA
- pF
May 1998 2 Rev 1.100





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