N-Channel MOSFET. AO3434 Datasheet

AO3434 MOSFET. Datasheet pdf. Equivalent

Part AO3434
Description 30V N-Channel MOSFET
Feature AO3434 30V N-Channel MOSFET General Description The AO3434 uses advanced trench technology to provi.
Manufacture Alpha & Omega Semiconductors
Datasheet
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AO3434
AO3434
30V N-Channel MOSFET
General Description
The AO3434 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in
PWM applications. It is ESD protected.
Product Summary
VDS (V) = 30V
ID = 4.2A
RDS(ON) < 52m
RDS(ON) < 75m
ESD protected
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
SOT23
Top View
Bottom View
D
D
D
S
G
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Maximum
Parameter
Symbol 10 sec
Steady-State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain TA=25°C
Current A,F
TA=70°C
Pulsed Drain Current B
4.2 3.5
ID 3.3 2.8
IDM 30
Power Dissipation
TA=25°C
TA=70°C
1.4 1.0
PD 0.9 0.64
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev.4. 0: August 2013
www.aosmd.com
Page 1 of 4



AO3434
AO3434
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(th)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=0V, VGS= ±16V
VDS=VGS ID=250µA
VGS=10V, ID=4.2A
VGS=4.5V, ID=2A
Forward Transconductance
VDS=5V, ID=4.2A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=15V, ID=4.2A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=3.6,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=4.2A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=4.2A, dI/dt=100A/µs
Min
30
1
Typ
1.32
43
58
59
8.5
0.77
269
65
41
1
5.7
3
1.37
0.65
2.6
5.5
15.2
3.7
15.5
7.1
Max Units
V
1
µA
5
10 uA
1.8 V
52
m
74
75 m
S
1V
1.8 A
340 pF
pF
pF
1.5
7.2 nC
nC
nC
nC
3.8 ns
8 ns
23 ns
5.5 ns
21 ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F.The current rating is based on the t10s thermal resistance rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.4. 0: August 2013
www.aosmd.com
Page 2 of 4





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