N-Channel MOSFET. AOT470 Datasheet

AOT470 MOSFET. Datasheet pdf. Equivalent

Part AOT470
Description N-Channel MOSFET
Feature AOT470/AOB470L 75V N-Channel MOSFET General Description Product Summary The AOT470/AOB470L uses a.
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AOT470
AOT470/AOB470L
75V N-Channel MOSFET
General Description
Product Summary
The AOT470/AOB470L uses advanced trench technology
and design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
75V
100A
< 10.5m
100% UIS Tested
100% Rg Tested
Top View
D
TO220
Bottom View
D
Top View
TO-263
D2PAK
Bottom View
D
D
D
G DS
G
SD
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain
TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.3mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
S
G
Maximum
75
±25
100
78
200
10
8
45
300
268
134
2.1
1.3
-55 to 175
G
S
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
10
45
0.45
Max
12
60
0.56
G
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev2: Mar 2012
www.aosmd.com
Page 1 of 6



AOT470
AOT470/AOB470L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=75V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
VDS=0V, VGS= ±25V
Gate Threshold Voltage
VDS=VGS, ID=250µA
On state drain current
VGS=10V, VDS=5V
VGS=10V, ID=30A
Static Drain-Source On-Resistance
TO220
VGS=10V, ID=30A
TO263
Forward Transconductance
VDS=5V, ID=30A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous CurrentG
TJ=55°C
TJ=125°C
75
2
200
2.7
8.3
13.7
8
90
0.7
1
5
1
4
10.5
17
10.2
1
100
V
µA
µA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
3760
280
110
1.5
4700
400
180
3
5640
520
250
4.5
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=30V, ID=30A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=30V, RL=1,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=30A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs
114 136 nC
33 40 nC
18 25 nC
21 ns
39 ns
70 ns
24 ns
37 53 70 ns
100 143 185 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev2: Mar 2012
www.aosmd.com
Page 2 of 6





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