N-Channel MOSFET. AO3422 Datasheet

AO3422 MOSFET. Datasheet pdf. Equivalent

Part AO3422
Description N-Channel MOSFET
Feature AO3422 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3422 uses advan.
Manufacture Alpha & Omega Semiconductors
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AO3422
AO3422
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3422 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. It offers
operation over a wide gate drive range from 2.5V to
12V. This device is suitable for use as a load switch.
Features
VDS (V) = 55V
ID = 2.1A (VGS = 4.5V)
RDS(ON) < 160m(VGS = 4.5V)
RDS(ON) < 200m(VGS = 2.5V)
SOT23
Top View
Bottom View
DD
D
S
G
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
55
±12
2.1
1.7
10
1.25
0.8
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
75
115
48
Max
100
150
60
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.



AO3422
AO3422
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=10mA, VGS=0V
VDS=44V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Source leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±12V
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=2.1A
VGS=2.5V, ID=1.5A
Forward Transconductance
VDS=5V, ID=2.1A
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=4.5V, VDS=27.5V, ID=2.1A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=27.5V, RL=12,
tD(off)
Turn-Off DelayTime
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=2.1A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=2.1A, dI/dt=100A/µs
Min
55
0.6
10
Typ Max Units
V
1
5
µA
±100 nA
1.3 2
V
A
125
175
160
210
m
157 200 m
11 S
0.78 1
V
1A
214 300
31
12.6
1.3 3
pF
pF
pF
2.6 3.3
0.6
0.8
2.3
2.4
16.5
2
20 30
17
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev2: Sep 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.





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