Power MOSFET. ECH8310 Datasheet

ECH8310 MOSFET. Datasheet pdf. Equivalent


Part ECH8310
Description P-Channel Power MOSFET
Feature Ordering number : ENA1430B ECH8310 P-Channel Power MOSFET –30V, –9A, 17mΩ, Single ECH8 http://onse.
Manufacture ON Semiconductor
Datasheet
Download ECH8310 Datasheet


Ordering number : ENA1430B ECH8310 P-Channel Power MOSFET – ECH8310 Datasheet
Recommendation Recommendation Datasheet ECH8310 Datasheet




ECH8310
Ordering number : ENA1430B
ECH8310
P-Channel Power MOSFET
–30V, –9A, 17m, Single ECH8
http://onsemi.com
Features
4V drive
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
--30
±20
--9
--60
1.5
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
7011A-002
Top View
2.9
85
ECH8310-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
JM
Lot No.
TL
1
0.65
4
0.3
Bottom View
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
ECH8
Electrical Connection
87 6 5
12 3 4
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
March, 2014
30714HK/60612TKIM/O1409TKIM TC-00002092 PE No. A1430-1/5



ECH8310
ECH8310
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--4.5A
ID=--4.5A, VGS=--10V
ID=--2A, VGS=--4.5V
ID=--2A, VGS=--4.0V
VDS=--10V, f=1MHz
See specified Test Circuit.
VDS=--15V, VGS=--10V, ID=--9A
IS=--9A, VGS=0V
min
--30
Ratings
typ
--1.2
9
12
13.5
12
13
20
23
1400
350
250
10
45
134
87
28
4
6
--0.8
max
--1
±10
--2.6
17
28
32.5
--1.2
Unit
V
mA
mA
V
S
mW
mW
mW
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10μs
D.C.1%
G
VDD= --15V
ID= --4.5A
RL=3.3
D VOUT
ECH8310
P.G 50S
Ordering Information
Device
ECH8310-TL-H
Package
ECH8
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1430-2/5







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