DatasheetsPDF.com

2SC5237. C5237 Datasheet

DatasheetsPDF.com

2SC5237. C5237 Datasheet






C5237 2SC5237. Datasheet pdf. Equivalent




C5237 2SC5237. Datasheet pdf. Equivalent





Part

C5237

Description

2SC5237

Manufacture

Hitachi

Datasheet
Download C5237 Datasheet


Hitachi C5237

C5237; 2SC5237 Silicon NPN Epitaxial Applicati on High frequency amplifier Features Excellent high frequency characterist ics fT = 400 MHz typ • High voltage a nd low output capacitance VCEO = 250 V, Cob = 3.5 pF typ • Suitable for wide band video amplifier Outline TO-126FM 123 1. Emitter 2. Collector 3. Base Free Datasheet http://www.datasheet4u.c om/ 2SC5237 Absolute M.


Hitachi C5237

aximum Ratings (Ta = 25°C) Item Collec tor to base voltage Collector to emitte r voltage Emitter to base voltage Colle ctor current Collector peak current Col lector power dissipation Symbol VCBO V CEO VEBO IC IC(peak) PC Junction tempe rature Storage temperature Note: 1. TC = 25°C Tj Tstg Ratings 250 250 3 150 300 1.4 8*1 150 –55 to +150 Unit V V V mA mA W °C °C Ele.


Hitachi C5237

ctrical Characteristics (Ta = 25°C) It em Symbol Min Typ Max Unit Test condit ions Collector to base breakdown V(BR) CBO 250 — — V voltage IC = 10 µA, IE = 0 Collector to emitter break down V(BR)CEO 250 — — V voltage IC = 1 mA, RBE = ∞ Collector cutof f current ICBO — — 1.0 µA VCB = 200 V, IE = 0 Emitter cutoff curren t IEBO — — 10 µA VEB = 3 V, IC = 0.



Part

C5237

Description

2SC5237

Manufacture

Hitachi

Datasheet
Download C5237 Datasheet




 C5237
2SC5237
Silicon NPN Epitaxial
Application
High frequency amplifier
Features
Excellent high frequency characteristics
fT = 400 MHz typ
High voltage and low output capacitance
VCEO = 250 V, Cob = 3.5 pF typ
Suitable for wide band video amplifier
Outline
TO-126FM
123
1. Emitter
2. Collector
3. Base
Free Datasheet http://www.datasheet4u.com/





 C5237
2SC5237
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Symbol
VCBO
VCEO
VEBO
IC
IC(peak)
PC
Junction temperature
Storage temperature
Note: 1. TC = 25°C
Tj
Tstg
Ratings
250
250
3
150
300
1.4
8*1
150
–55 to +150
Unit
V
V
V
mA
mA
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to base breakdown V(BR)CBO 250
V
voltage
IC = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO 250
V
voltage
IC = 1 mA, RBE =
Collector cutoff current
ICBO
1.0 µA
VCB = 200 V, IE = 0
Emitter cutoff current
IEBO — — 10 µA VEB = 3 V, IC = 0
DC current transfer ratio
hFE*1 60 — 200 — VCE = 10 V, IC = 10 mA
Base to emitter voltage
VBE — — 1.0 V VCE = 10 V, IC = 50 mA
Collector to emitter saturation VCE(sat)
1.0 V
voltage
IC = 50 mA, IB = 5 mA
Gain bandwidth product
fT
300 400 —
MHz VCE = 30 V, IC = 50 mA
Collector output capacitance Cob — 3.5 5.0 pF VCB = 30 V, IE = 0, f = 1 MHz
Note: 1. The 2SC2537 is grouped by hFE and its specification is as follows.
B
60 to 120
C
100 to 200
2
Free Datasheet http://www.datasheet4u.com/





 C5237
Maximum Collector Dissipation Curve
8
6
Tc
4
2
1.4W
Ta
0 50 100 150 200
Case Temperature Tc (°C)
Ambient Temperature Ta (°C)
Area of Safe Operation
1000
1 shot pulse (Ta = 25 °C)
500
ic(peak)
200 I Cmax
100
50
20
10
10 20
50 100 200 500
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
200
20 1m81A6m1m41A21Am08mA6mmAmAAA
4 mA
100 2 mA
Tc = 25 °C
IB= 0
0 5 10
Collector to Emitter Voltage VCE (V)
2SC5237
3
Free Datasheet http://www.datasheet4u.com/



Recommended third-party C5237 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)