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Power-Transistor. IPB80N06S2L-11 Datasheet

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Power-Transistor. IPB80N06S2L-11 Datasheet






IPB80N06S2L-11 Power-Transistor. Datasheet pdf. Equivalent




IPB80N06S2L-11 Power-Transistor. Datasheet pdf. Equivalent





Part

IPB80N06S2L-11

Description

Power-Transistor



Feature


OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mo de • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) PG-TO263-3-2 • Ultra low Rds(on) • 100% Avalanche t ested IPB80N06S2L-11 IPP80N06S2L-11, I PI80N06S2L-11 Product Summary V DS R D S(on),max (SMD version) ID 55 V 10.
Manufacture

Infineon Technologies

Datasheet
Download IPB80N06S2L-11 Datasheet


Infineon Technologies IPB80N06S2L-11

IPB80N06S2L-11; .7 mW 80 A PG-TO220-3-1 PG-TO262-3-1 Type IPB80N06S2L-11 IPP80N06S2L-11 IPI8 0N06S2L-11 Package PG-TO263-3-2 PG-TO2 20-3-1 PG-TO262-3-1 Ordering Code Mark ing SP0002-18177 2N06L11 SP0002-18175 2 N06L11 SP0002-18176 2N06L11 Maximum ra tings, at T j=25 °C, unless otherwise specified Parameter Symbol Condition s Continuous drain current1) I D T C= 25 °C, V GS=10 V T.


Infineon Technologies IPB80N06S2L-11

C=100 °C, V GS=10 V2) Pulsed drain cu rrent2) Avalanche energy, single pulse2 ) Gate source voltage4) I D,pulse E AS V GS T C=25 °C I D=80A Power dissip ation P tot T C=25 °C Operating and storage temperature T j, T stg Value 8 0 58 320 280 ±20 158 -55 ... +175 Uni t A mJ V W °C Rev. 1.1 page 1 2010- 10-26 IPB80N06S2L-11 IPP80N06S2L-11, I PI80N06S2L-11 Paramete.


Infineon Technologies IPB80N06S2L-11

r Symbol Conditions min. Values typ. Unit max. Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambi ent, leaded R thJA - - 0.95 K/W - - 6 2 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area5) - - 62 - 40 Electrical characteristi cs, at T j=25 °C, unless otherwise spe cified Static char.

Part

IPB80N06S2L-11

Description

Power-Transistor



Feature


OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mo de • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) PG-TO263-3-2 • Ultra low Rds(on) • 100% Avalanche t ested IPB80N06S2L-11 IPP80N06S2L-11, I PI80N06S2L-11 Product Summary V DS R D S(on),max (SMD version) ID 55 V 10.
Manufacture

Infineon Technologies

Datasheet
Download IPB80N06S2L-11 Datasheet




 IPB80N06S2L-11
OptiMOS® Power-Transistor
Features
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
PG-TO263-3-2
• Ultra low Rds(on)
• 100% Avalanche tested
IPB80N06S2L-11
IPP80N06S2L-11, IPI80N06S2L-11
Product Summary
V DS
R DS(on),max (SMD version)
ID
55 V
10.7 mW
80 A
PG-TO220-3-1
PG-TO262-3-1
Type
IPB80N06S2L-11
IPP80N06S2L-11
IPI80N06S2L-11
Package
PG-TO263-3-2
PG-TO220-3-1
PG-TO262-3-1
Ordering Code Marking
SP0002-18177 2N06L11
SP0002-18175 2N06L11
SP0002-18176 2N06L11
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
Gate source voltage4)
I D,pulse
E AS
V GS
T C=25 °C
I D=80A
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Value
80
58
320
280
±20
158
-55 ... +175
Unit
A
mJ
V
W
°C
Rev. 1.1
page 1
2010-10-26




 IPB80N06S2L-11
IPB80N06S2L-11
IPP80N06S2L-11, IPI80N06S2L-11
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
- - 0.95 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area5)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=93 µA 1.2 1.6 2.0
Zero gate voltage drain current
I DSS
V DS=55 V, V GS=0 V,
T j=25 °C
-
0.01
1 µA
V DS=55 V, V GS=0 V,
T j=125 °C2)
-
1 100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1 100 nA
Drain-source on-state resistance
R DS(on) V GS=4.5 V, I D=40 A
- 10.7 14.7 mW
V GS=4.5 V, I D=40 A, - 10.4 14.4
SMD version
Drain-source on-state resistance
RDS(on) V GS=10 V, I D=40 A,
-
8.7 11.0 mΩ
V GS=10 V, I D=40 A, - 8.4 10.7
SMD version
Rev. 1.1
page 2
2010-10-26




 IPB80N06S2L-11
Parameter
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
Diode forward voltage
Reverse recovery time2)
Symbol
IPB80N06S2L-11
IPP80N06S2L-11, IPI80N06S2L-11
Conditions
min.
Values
typ.
Unit
max.
C iss
C oss
Crss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=30 V, V GS=10 V,
I D=80 A, R G=3 W
-
-
-
-
-
-
-
2075
585
197
11
32
46
13
- pF
-
-
- ns
-
-
-
Q gs - 7 9 nC
Q gd V DD=44 V, I D=80 A,
Q g V GS=0 to 10 V
-
-
21 30
62 80
V plateau
- 3.6 - V
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=80 A,
T j=25 °C
t rr
V R=30 V, I F=I S,
di F/dt =100 A/µs
- - 80 A
- - 320
- 1 1.3 V
- 54 67 ns
Reverse recovery charge2)
Q rr
- 61 76 nC
1) Current is limited by bondwire; with an R thJC = 0.95K/W the chip is able to carry 83A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2) Defined by design. Not subject to production test.
3) See diagram 13
4) Qualified at -20V and +20V.
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.1
page 3
2010-10-26



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