Power MOSFET. IRF9610 Datasheet

IRF9610 MOSFET. Datasheet pdf. Equivalent


Vishay IRF9610
Power MOSFET
IRF9610, SiHF9610
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
- 200
VGS = - 10 V
11
7.0
4.0
Single
3.0
S
TO-220
G
S
D
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
FEATURES
• Dynamic dV/dt Rating
• P-Channel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
The Power MOSFETs technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220
IRF9610PbF
SiHF9610-E3
IRF9610
SiHF9610
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VGS at - 10 V
TC = 25
TC = 100
VDS
VGS
ID
Pulsed Drain Currenta
IDM
Linear Derating Factor
Maximum Power Dissipation
Inductive Current, Clamp
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
ILM
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Not applicable.
c. ISD - 1.8 A, dI/dt 70 A/µs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91080
S09-0046-Rev. A, 19-Jan-09
LIMIT
- 200
± 20
- 1.8
- 1.0
- 7.0
0.16
20
- 7.0
- 5.0
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
W
A
V/ns
°C
lbf · in
N·m
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IRF9610 Datasheet
Recommendation IRF9610 Datasheet
Part IRF9610
Description Power MOSFET
Feature IRF9610; Power MOSFET IRF9610, SiHF9610 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC.
Manufacture Vishay
Datasheet
Download IRF9610 Datasheet




Vishay IRF9610
IRF9610, SiHF9610
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
RthJA
RthCS
Maximum Junction-to-Case (Drain)
RthJC
TYP.
-
0.50
-
MAX.
62
-
6.4
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
Reference to 25 °C, ID = - 1 mA
VDS = VGS, ID = - 250 µA
VGS = ± 20 V
VDS = - 200 V, VGS = 0 V
VDS = - 160 V, VGS = 0 V, TJ = 125 °C
VGS = - 10 V
ID = -0.90 Ab
VDS = - 50 V, ID = - 0.90 Ab
- 200
-
- 2.0
-
-
-
-
0.90
-
- 0.23
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
3.0
-
V
V/°C
V
nA
µA
Ω
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 10
- 170 -
- 50 - pF
- 15 -
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - - 11
Qgs
VGS = - 10 V
ID = - 3.5 A, VDS = - 160 V,
see fig. 11 and 18b
-
- 7.0 nC
Qgd - - 4.0
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD = - 100 V, ID = - 0.90 A,
RG = 50 Ω, RD = 110 Ω, see fig. 17b
- 8.0 -
- 15 -
ns
- 10 -
- 8.0 -
Internal Drain Inductance
Internal Source Inductance
LD
Between lead,
6 mm (0.25") from
D
package and center of
G
LS die contact
S
- 4.5 -
nH
- 7.5 -
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Currenta
IS
ISM
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
G
S
- - - 1.8
A
- - - 7.0
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 1.8 A, VGS = 0 Vb
-
-
- 5.8
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
TJ = 25 °C, IF = - 1.8 A, dI/dt = 100 A/µsb
-
240 360 ns
Qrr - 1.7 2.6 µC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 5).
b. Pulse width 300 µs; duty cycle 2 %.
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Document Number: 91080
S09-0046-Rev. A, 19-Jan-09



Vishay IRF9610
IRF9610, SiHF9610
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
- 2.40
- 1.92
VGS = - 10, - 9, - 8, - 7 V
- 2.40
- 1.92
VGS = - 10, - 9, - 8 V
-7V
- 1.44
-6V
- 0.96
- 0.48
-5V
80 µs Pulse Test
-4V
0.00
0
- 10 - 20 - 30 - 40 - 50
91080_01
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
- 1.44
-6V
- 0.96
- 0.48
-5V
0.00
0
80 µs Pulse Test
-2 -4 -6
-4V
- 8 - 10
91080_03
VDS, Drain-to-Source Voltage (V)
Fig. 3 - Typical Saturation Characteristics
- 2.40
- 1.92
- 1.44
TJ = - 55 °C
TJ = 25 °C
TJ = 125 °C
- 0.96
- 0.48
0.00
0
80 µs Pulse Test
VDS > ID(on) x RDS(on) max.
- 2 - 4 - 6 - 8 - 10
91080_02
VGS, Gate-to-Source Voltage (V)
Fig. 2 - Typical Transfer Characteristics
102
Operation in this area limited
5 by RDS(on)
2
10
5
100 µs
2
1 1 ms
5
2
0.1
1
2
TC = 25 °C
TJ = 150 °C
Single Pulse
10 ms
5 10 2
5 102 2
5 103
91080_04
Negative VDS, Drain-to-Source Voltage (V)
Fig. 4 - Maximum Safe Operating Area
2.0
1.0
0.5 D = 0.5
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.02 0.01
0.01
10-5
2
Single Pulse (Transient
Thermal Impedence)
5 10-4 2
5 10-3 2
5 10-2 2
PDM
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Per Unit Base = RthJC = 6.4 °C/W
3. TJM - TC = PDM ZthJC(t)
5 0.1 2
5 1.0 2
5 10
91080_05
t1, Square Wave Pulse Duration (s)
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
Document Number: 91080
S09-0046-Rev. A, 19-Jan-09
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