Switching Diodes. BAV21W Datasheet

BAV21W Diodes. Datasheet pdf. Equivalent

BAV21W Datasheet
Recommendation BAV21W Datasheet
Part BAV21W
Description Small Signal Switching Diodes
Feature BAV21W; www.vishay.com BAV19W, BAV20W, BAV21W Vishay Semiconductors Small Signal Switching Diodes, High Vo.
Manufacture Vishay
Datasheet
Download BAV21W Datasheet




Vishay BAV21W
www.vishay.com
BAV19W, BAV20W, BAV21W
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
DESIGN SUPPORT TOOLS click logo to get started
Models
Available
MECHANICAL DATA
Case: SOD-123
Weight: approx. 10.3 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 m tape), 15K/box
FEATURES
• Silicon epitaxial planar diodes
• For general purpose
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial
grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
PART
TYPE
DIFFERENTIATION
BAV19W
VR = 100 V
BAV20W
VR = 150 V
BAV21W
VR = 200 V
ORDERING CODE
BAV19W-E3-08 or BAV19W-E3-18
BAV19W-HE3-08 or BAV19W-HE3-18
BAV20W-E3-08 or BAV20W-E3-18
BAV20W-HE3-08 or BAV20W-HE3-18
BAV21W-E3-08 or BAV21W-E3-18
BAV21W-HE3-08 or BAV21W-HE3-18
TYPE
MARKING
A8
A9
AA
CIRCUIT
CONFIGURATION
Single
REMARKS
Tape and reel
Single
Tape and reel
Single
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
Continuous reverse voltage
Repetitive peak reverse voltage
DC Forward current (1)
Rectified current (average) half wave
rectification with resist. load (1)
BAV19W
BAV20W
BAV21W
BAV19W
BAV20W
BAV21W
VR
VR
VR
VRRM
VRRM
VRRM
IF
IF(AV)
Repetitive peak forward current (1)
f 50 Hz, = 180°
IFRM
Surge forward current
t < 1 s, Tj = 25 °C
IFSM
Power dissipation (1)
Ptot
VALUE
100
150
200
120
200
250
250
200
625
1
410
UNIT
V
V
V
V
V
V
mA
mA
mA
A
mW
Rev. 1.6, 23-Feb-18
1
Document Number: 85725
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay BAV21W
www.vishay.com
BAV19W, BAV20W, BAV21W
Vishay Semiconductors
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
Junction temperature (1)
Storage temperature range (1)
RthJA
Tj
Tstg
Operating temperature range
Top
Note
(1) Valid provided that leads are kept at ambient temperature
VALUE
375
150
-65 to +150
-55 to +150
UNIT
°C/W
°C
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL
MIN.
TYP.
Forward voltage
IF = 100 mA
VF
IF = 200 mA
VF
VR = 100 V
BAV19W
IR
VR = 100 V, Tj = 100 °C BAV19W
IR
Leakage current
VR = 150 V
BAV20W
IR
VR = 150 V, Tj = 100 °C BAV20W
IR
VR = 200 V
BAV21W
IR
VR = 200 V, Tj = 100 °C BAV21W
IR
Dynamic forward
resistance
IF = 10 mA
rf
5
Diode capacitance
VR = 0, f = 1 MHz
CD
1.5
Reverse recovery time
IF = 30 mA, IR = 30 mA,
iR = 3 mA, RL = 100
trr
MAX.
1
1.25
100
15
100
15
100
15
50
UNIT
V
V
nA
μA
nA
μA
nA
μA
pF
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
0.3
100
Tj = 100 °C
0.2
10
25 °C
DC current IF
1
Current (rectif.) IO
0.1
0.1
0.01
0
18858
0.2
0.4
0.6
0.8
1
VF - Forward Voltage (V)
0
0
18859
30
60
90
120 150
Tamb - Ambient Temperature (°C)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Admissible Forward Current vs. Ambient Temperature
Rev. 1.6, 23-Feb-18
2
Document Number: 85725
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



Vishay BAV21W
www.vishay.com
BAV19W, BAV20W, BAV21W
Vishay Semiconductors
500
400
300
200
100
0
0
18860
40
80
120 160 200
Tamb - Ambient Temperature (°C)
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
100
10
1
1
18861
10
100
IF - Forward Current (mA)
Fig. 4 - Dynamic Forward Resistance vs. Forward Current
100
1000
100
10
1
0.1
0
18862
Reverse Voltage
BAV19W VR = 100 V
BAV20W VR = 150 V
BAV21W VR = 200 V
40 80 120 160 200
Tj - Junction Temperature (°C)
Fig. 5 - Leakage Current vs. Junction Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.1
18863
Tj = 25 ° C
1
10
100
VR - Reverse Voltage (V)
Fig. 6 - Capacitance vs. Reverse Voltage
10
1
TJ = 25 °C - Prior to Surge
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
tp - Test Pulse (s)
Fig. 7 - Non-Repetitive Peak Forward Current vs. Pulse Duration
Maximum Admissible Values of Square Pulse
Rev. 1.6, 23-Feb-18
3
Document Number: 85725
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000







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