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MPF930

ON Semiconductor
Part Number MPF930
Manufacturer ON Semiconductor
Description TMOS Switching
Published Jan 26, 2016
Detailed Description MPF930 TMOS Switching N−Channel — Enhancement MAXIMUM RATINGS Rating Drain −Source Voltage Drain −Gate Voltage Gate−Sou...
Datasheet PDF File MPF930 PDF File

MPF930
MPF930

Overview
MPF930 TMOS Switching N−Channel — Enhancement MAXIMUM RATINGS Rating Drain −Source Voltage Drain −Gate Voltage Gate−Source Voltage — Continuous — Non−repetitive (tp ≤ 50 μs) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VDS VDG VGS VGSM ID IDM PD MPF930 35 35 MPF960 60 60 ± 20 ± 40 2.
0 3.
0 1.
0 8.
0 MPF990 90 90 Unit Vdc Vdc Vdc Vpk Adc W mW/°C http://onsemi.
com CASE 29−05, STYLE 22 TO−92 (TO−226AE) 1 23 3 DRAIN Operating and Storage Junction Temperature Range TJ, Tstg −55 to 150 °C 2 GATE Thermal Resistance θJA 125 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min 1 SOURCE Typ ...


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