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BLF640

NXP

Broadband power LDMOS transistor


Description
BLF640 Broadband power LDMOS transistor Rev. 2 — 11 April 2013 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for applications at frequencies from HF to 2200 MHz Table 1. Typical performance IDq = 100 mA; Tcase = 25 C in a common source class-AB production test circuit. Test signal f VDS PL(AV) Gp D (MH...



NXP

BLF640

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