N-Channel MOSFET. HFS10N65U Datasheet


HFS10N65U MOSFET. Datasheet pdf. Equivalent


Part Number

HFS10N65U

Description

N-Channel MOSFET

Manufacture

SemiHow

Total Page 7 Pages
Datasheet
Download HFS10N65U Datasheet


HFS10N65U
HFS10N65U
650V N-Channel MOSFET
FEATURES
‰ Originative New Design
‰ Superior Avalanche Rugged Technology
‰ Robust Gate Oxide Technology
‰ Very Low Intrinsic Capacitances
‰ Excellent Switching Characteristics
‰ Unrivalled Gate Charge : 29 nC (Typ.)
‰ Extended Safe Operating Area
‰ Lower RDS(ON) : 0.8 ȍ 7\S #9GS=10V
‰ 100% Avalanche Tested
Oct 2013
BVDSS = 650 V
RDS(on) typ = 0.8 ȍ
ID = 9.5 A
TO-220F
12
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
650
9.5*
6.0*
38*
ρ30
470
9.5
5.0
4.5
PD
TJ, TSTG
TL
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
50
0.40
-55 to +150
300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
RșJC
RșJA
Parameter
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
2.5
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
/W
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝΀ΔΥ͑ͣͤ͑͢͡

HFS10N65U
Package Marking and Odering Information
Device Marking
HFS10N65U
HFS10N65U
Week Marking
YWWX
YWWXg
Package
TO-220F
TO-220F
Packing
Tube
Tube
Quantity
50
50
RoHS Status
Pb Free
Halogen Free
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VDS = VGS, ID = 250
VGS = 10 V, ID = 4.75 A
2.5
--
Off Characteristics
BVDSS
ǻBVDSS
/ǻTJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
Dynamic Characteristics
VGS = 0 V, ID = 250
ID = 250 , Referenced to 25
VDS = 650 V, VGS = 0 V
VDS = 520 V, TC = 125
VGS = ρ30 V, VDS = 0 V
650
--
--
--
--
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
--
--
td(on) Turn-On Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 325 V, ID = 9.5 A,
RG = 25 Ÿ
(Note 4,5)
VDS = 520V, ID = 9.5 A,
VGS = 10 V
(Note 4,5)
Source-Drain Diode Maximum Ratings and Characteristics
--
--
--
--
--
--
--
IS Continuous Source-Drain Diode Forward Current
--
ISM Pulsed Source-Drain Diode Forward Current
--
VSD Source-Drain Diode Forward Voltage IS = 9.5 A, VGS = 0 V
--
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IS = 9.5 A, VGS = 0 V
diF/dt = 100 A/ȝV (Note 4)
--
--
Typ Max Units
-- 4.5
0.80 0.98
V
Ÿ
-- -- V
0.6 -- V/
-- 1
-- 10
-- ρ100
1600
140
11
2100
180
14.5
50 100
70 140
160 320
60 120
29 38
8.5 --
9 --
nC
nC
nC
-- 9.5
-- 38
-- 1.4
340 --
3.3 --
A
V
ȝ&
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=9.6mH, IAS=9.5A, VDD=50V, RG=25:, Starting TJ =25qC
3. ISD”$, di/dt”$ȝV, VDD”%9DSS , Starting TJ =25 qC
4. Pulse Test : Pulse Width ”ȝV'XW\&\FOH”
5. Essentially Independent of Operating Temperature
క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͢͝΀ΔΥ͑ͣͤ͑͢͡


Features HFS10N65U HFS10N65U 650V N-Channel MOSF ET FEATURES ‰ Originative New Design Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellen t Switching Characteristics ‰ Unrivall ed Gate Charge : 29 nC (Typ.) ‰ Extend ed Safe Operating Area ‰ Lower RDS(ON) : 0.8 ȍ 7S #9GS=10V ‰ 100% Avalan che Tested Oct 2013 BVDSS = 650 V RDS( on) typ = 0.8 ȍ ID = 9.5 A TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute M aximum Ratings TC=25୅ unless otherwis e specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drai n-Source Voltage Drain Current Drain C urrent Drain Current – Continuous (T C = 25୅) – Continuous (TC = 100୅ ) – Pulsed (Note 1) Gate-Source Vo ltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 65 0 9.5* 6.0* 38* ρ30 470 9.5 5.0 4.5 P D TJ, TSTG TL Power Dissipation (TC = 25୅) - Derate above 25୅ Operating and Storage Te.
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