DatasheetsPDF.com

2SD999

WEJ

NPN EPITAXIAL SILICON TRANSISTOR


Description
RoHS 2SD999 2SD999 TRANSISTOR (NPN) FEATURES Power dissipation DPCM: 0.5 W (Tamb=25℃) TCollector current ICM: 1 A .,LCollector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range OTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 CELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Para...



WEJ

2SD999

File Download Download 2SD999 Datasheet


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)