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2SK3209

Part Number	2SK3209
Manufacturer	Renesas
Description	Silicon N Channel MOS FET
Published	Apr 8, 2016
Detailed Description	2SK3209 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 40 mΩ typ. • High speed ...
Datasheet	2SK3209 PDF File

Overview

2SK3209 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 40 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1090-0300 (Previous: ADE-208-759A) Target Specification Rev.
3.
00 Sep 07, 2005 RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1.
Gate 2.
Drain 3.
Source 12 3 S Rev.
3.
00 Sep 07, 2005 page 1 of 3 2SK3209 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycl...

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