EPITAXIAL TRANSISTORS. BCW61B Datasheet

BCW61B TRANSISTORS. Datasheet pdf. Equivalent

Part BCW61B
Description SILICON PLANAR EPITAXIAL TRANSISTORS
Feature Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Fo.
Manufacture CDIL
Datasheet
Download BCW61B Datasheet



BCW61B
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW61A BCW61B
BCW61C BCW61D
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P silicon transistors
Marking
BCW61A = BA
BCW61B = BB
BCW61C = BC
BCW61D = BD
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–emitter voltage (VBE = 0)
Collector–emitter voltage (open base)
Collector current (d.c.)
Total power dissipation
Junction temperature
Transition frequency at f: 100 MHz
–VCE = 5 V; –IC = 10 mA
Noise figure at f = 1 kHz
–VCE = 5 V; –IC = 200 mA
–VCES
–VCEO
–IC
Ptot
Tj
max.
max.
max.
max.
max.
32 V
32 V
200 mA
250 mW
150 °C
fT typ. 180 MHz
F typ. 2 dB
Continental Device India Limited
Data Sheet
Page 1 of 3



BCW61B
BCW61A BCW61B
BCW61C BCW61D
RATINGS (at TA = 25°C unless otherwise specified)
Limiting values
Collector–emitter voltage (VBE = 0)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Base current
Total power dissipation up to Tamb = 25 °C
Storage temperatu re
Junction temperature
–VCES
–VCE0
–VEB0
–IC
–lB
Ptot
Tstg
Tj
max. 32 V
max. 32 V
max. 5 V
max. 200 mA
max. 50 mA
max. 250 mW
–55 to +150 °C
max. 150 ° C
THERMAL RESISTANCE
From junction to ambient
Rth j–a =
500 K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified
Collector–emitter cut–off current
VEB = 0; –VCE = 32 V
VEB = 0; –VCE = 32 V; Tamb = 150 °C
Emitter–base cut–off current
IC = 0; –VEB = 4 V
Saturation voltages
–IC = 10 mA; –lB = 0,25 mA
–ICES
–ICES
<
<
20 nA
20 mA
–IEB0
<
20 nA
–VCEsat 0,06 to 0,25 V
–VBEsat 0,6 to 0,85 V
–IC = 50mA; –IB = 1,25mA
Transition frequency at f = 100 MHz ·
–VCE = 5 V; –IC = 10 mA
Collector capacitance at f = 1 MHz
–VCB = 10 V; IE: Ie = 0
Emitter capacitance at f = 1 MHz
–VEB = 0,5 V; IC = Ic = 0
Noise figure at RS = 2 kW
–VCE = 5 V; –IC = 200 mA; B = 200 Hz
–VCEsat 0,12 to 0,55 V
–VBEsat 0,68 to 1,05 V
fT typ. 180 MHz
Cc typ. 4,5 pF
Ce typ. 11 pF
typ. 2 dB
F < 6 dB
D.C. current gain
–VCE = 5 V; –IC = 10 mA
BCW61A 61B 61C 61D
hFE >
20 30 40 100
–VCE = 5 V; –IC = 2 mA
hFE >
<
120 180
220 310
250 380
460 630
–VCE = 1 V; –IC = 50mA
Input impedance
hFE
–VCE = 5 V; –IC = 2 mA; f = 1 kHz hie
> 60 80 100 110
typ. 2,7 3,6 4,5 7,5 kW
Continental Device India Limited
Data Sheet
Page 2 of 3





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