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Planar Transistor. C3833 Datasheet

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Planar Transistor. C3833 Datasheet






C3833 Transistor. Datasheet pdf. Equivalent




C3833 Transistor. Datasheet pdf. Equivalent





Part

C3833

Description

Silicon NPN Triple Diffused Planar Transistor



Feature


2SC3833 Silicon NPN Triple Diffused Pla nar Transistor (High Voltage and High S peed Switching Transistor) Application : Switching Regulator and General Purpo se sAbsolute maximum ratings (Ta=25°C ) Symbol VCBO VCEO VEBO IC IB PC Tj Ts tg 2SC3833 500 400 10 12(Pulse24) 4 10 0(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Character istics Symbol ICBO IEBO.
Manufacture

Sanken

Datasheet
Download C3833 Datasheet


Sanken C3833

C3833; V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE =4V, IC=7A IC=7A, IB=1.4A IC=7A, IB=1.4 A VCE=12V, IE=–1A VCB=10V, f=1MHz (T a=25°C) 2SC3833 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 105typ Un it µA µA V V V MHz pF sTypical Switc hing Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω) (A) (V) (V) (A) 200 28..


Sanken C3833

5 7 10 –5 0.7 IB2 (A) –1.4 ton ( µs) 1.0max tstg (µs) 3.0max tf (µs ) 0.5max External Dimensions MT-100(TO 3P) 15.6±0.4 9.6 4.8±0.2 2.0±0.1 1.8 5.0±0.2 19.9±0.3 4.0 2.0 20.0mi n 4.0max a ø3.2±0.1 b 2 3 1.05 +-00 ..12 0.65 +0.2 -0.1 5.45±0.1 5.45 0.1 1.4 BCE Weight : Approx 6.0g a . Type No. b. Lot No. DC Current Gain hFE Collector Current IC(A) I C.


Sanken C3833

– V CE Characteristics (Typical) 12 10 00mA 10 800mA 600mA 8 400mA 6 200mA 4 I B=100mA 2 0 0 1 2 34 Collector-Emitter Voltage VCE(V) Collector-Emitter Satur ation Voltage VCE(sat)(V) Base-Emitter Saturation Voltage VBE(sat)(V) VCE(sat ),VBE(sat)–IC Temperature Characteris tics (Typical) (IC/IB=5) 1 –55˚C (C ase Temp) 25˚C (Case Temp) 125˚C (Cas e Temp) VBE(sat) VCE(sat).

Part

C3833

Description

Silicon NPN Triple Diffused Planar Transistor



Feature


2SC3833 Silicon NPN Triple Diffused Pla nar Transistor (High Voltage and High S peed Switching Transistor) Application : Switching Regulator and General Purpo se sAbsolute maximum ratings (Ta=25°C ) Symbol VCBO VCEO VEBO IC IB PC Tj Ts tg 2SC3833 500 400 10 12(Pulse24) 4 10 0(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C sElectrical Character istics Symbol ICBO IEBO.
Manufacture

Sanken

Datasheet
Download C3833 Datasheet




 C3833
2SC3833
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switching Transistor) Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
2SC3833
500
400
10
12(Pulse24)
4
100(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
sElectrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Conditions
VCB=500V
VEB=10V
IC=25mA
VCE=4V, IC=7A
IC=7A, IB=1.4A
IC=7A, IB=1.4A
VCE=12V, IE=–1A
VCB=10V, f=1MHz
(Ta=25°C)
2SC3833
100max
100max
400min
10 to 30
0.5max
1.3max
10typ
105typ
Unit
µA
µA
V
V
V
MHz
pF
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) () (A) (V) (V) (A)
200 28.5
7
10 –5 0.7
IB2
(A)
–1.4
ton
(µs)
1.0max
tstg
(µs)
3.0max
tf
(µs)
0.5max
External Dimensions MT-100(TO3P)
15.6±0.4
9.6
4.8±0.2
2.0±0.1
a ø3.2±0.1
b
2
3
1.05 +-00..12
0.65
+0.2
-0.1
5.45±0.1
5.45±0.1
1.4
BCE
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I C– V CE Characteristics (Typical)
12
1000mA
10 800mA
600mA
8
400mA
6
200mA
4
IB=100mA
2
0
0 1 2 34
Collector-Emitter Voltage VCE(V)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
(IC/IB=5)
1
–55˚C (Case Temp)
25˚C (Case Temp)
125˚C (Case Temp)
VBE(sat)
VCE(sat)
125˚C
–5 5 ˚ C
0
0.02 0.05 0.1
0.5 1
5 10
Collector Current IC(A)
I C– V BE Temperature Characteristics (Typical)
(VCE=4V)
12
10
8
6
4
2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
(VCE=4V)
50
125˚C
25˚C
–30˚C
10
t on• t stg• t f– I C Characteristics (Typical)
8
5
VCC 200V
IC:IB1:–IB2=10:1:2
1
0.5
ton
tstg
θ j-a– t Characteristics
2
1
0.5
5
0.02
0.05 0.1
0.5 1
Collector Current IC(A)
5 10 12
0.1
0.5
tf
15
Collector Current IC(A)
0.1
10 1
10 100
Time t(ms)
1000
Safe Operating Area (Single Pulse)
30
100µs
10
5
1
0.5
0.1
0.05
Without Heatsink
Natural Cooling
0.01
5
10 50 100
Collector-Emitter Voltage VCE(V)
500
Reverse Bias Safe Operating Area
30
10
5
1
0.5
0.1
0.05
Without Heatsink
Natural Cooling
L=3mH
–IB2=1A
Duty:less than 1%
0.01
5
10 50 100
Collector-Emitter Voltage VCE(V)
500
Pc–Ta Derating
100
50
3.5 Without Heatsink
0
0 25 50
75
100 125
Ambient Temperature Ta(˚C)
150
73











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