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2N5415

Inchange Semiconductor
Part Number 2N5415
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistor
Published Jun 22, 2016
Detailed Description INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·PNP high-voltage transistor ·Low current (max. 200 ...
Datasheet PDF File 2N5415 PDF File

2N5415
2N5415

Overview
INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·PNP high-voltage transistor ·Low current (max.
200 mA) ·High voltage (max.
300 V) isc Product Specification 2N5415 APPLICATIONS ·Designed for Switching and linear amplification in military, industrial and consumer equipment applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 4V IC Collector Current-Continuous 0.
2 A ICM Peak Collector Current 0.
4 A IBM Peak Base cCurrent Collector Power Dissipation @ Ta<50℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.
2 A 1.
0 W 10 200 ℃ Tstg Storage Temperature Range -60~200 ℃ isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2N5415 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturati...


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