Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·DC Current Gain-
: hFE= 30~250(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for B&W TV horizontal output ,...
Inchange Semiconductor
3DD15 PDF File
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