Silicon NPN Power Transistor
Description
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD7F
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2V(Max) @IC= 3.75A
APPLICATIONS ·Designed for power amplifier, low speed switching and
regulated power supply applications.
ABSOLUTE MAXIMUM RAT...
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