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3DD7G
Silicon NPN Power Transistor
Description
INCHANGE Semiconductor isc Silicon
NPN
Power
Transistor
isc Product Specification 3DD7G DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.75A APPLICATIONS ·Designed for power amplifier, low speed switching and regulated power supply applications. ABSOLUTE MAXIMUM RAT...
Inchange Semiconductor
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