Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 110V(Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2V(Max) @IC= 5A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier, low speed switching and
regulated power supply application...
Inchange Semiconductor
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