Silicon PNP Power Transistor
Description
isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min) ·DC Current Gain-
: hFE= 40(Min)@ IC= -500mA ·Complement to Type BD955 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta...
Inchange Semiconductor
BD956 PDF File
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