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BDT60B

Part Number	BDT60B
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Jun 26, 2016
Detailed Description	isc Silicon PNP Darlington Power Transistors BDT60/A/B/C DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Coll...
Datasheet	BDT60B PDF File

Overview

isc Silicon PNP Darlington Power Transistors BDT60/A/B/C DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.
5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- BDT60B; -120V(Min)- BDT60C ·Complement to Type BDT61/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT60 -60 VCBO Collector-Base Voltage BDT60A -80 V BDT60B -100 BDT60C -120 BDT60 -60 VCEO Collector-Emitter Voltage BDT60A -80 ...

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