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MJ21195G

Part Number	MJ21195G
Manufacturer	Thinki Semiconductor
Description	250 Watt Silicon Type Metal Package Power Transistor
Published	Jul 13, 2016
Detailed Description	MJ21195G/MJ21196G ® Pb Free Plating Product MJ21195G/MJ21196G Pb 250 Watt Silicon Type Metal Package Power Transist...
Datasheet	MJ21195G PDF File

Overview

MJ21195G/MJ21196G ® Pb Free Plating Product MJ21195G/MJ21196G Pb 250 Watt Silicon Type Metal Package Power Transistor The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
• Total Harmonic Distortion Characterized • High DC Current Gain – hFE = 25 Min @ IC = 8 Adc • Excellent Gain Linearity • High SOA: 3 A, 80 V, 1 Second SCHEMATIC PNP CASE 3 NPN CASE 3 CASE 1–07 TO–204AA (TO–3) 1 BASE 1 BASE EMITTER 2 EMITTER 2 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector–Emitter Voltage – 1.
5 V Collector Current — Continuous Collector Current — Peak (1) Base Current — Continuous Total Power Dissipation @ TC = 25°C Derate Above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C ± 5°C unless otherwise n...

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