Silicon PNP Darlington Power Transistor
Description
isc Silicon PNP Darlington Power Transistor
MJH11017
DESCRIPTION ·High DC Current Gain-
: hFE = 400(Min)@ IC= -10A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -150V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -2.5V(Max)@ IC= -10A = -4.0V(Max)@ IC= -15A
·Complement to Type MJH11018 ·Minimum Lot-to-Lot variations for robust device
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