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CFY30

GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)

Description

GaAs FET CFY 30 ________________________________________________________________________________________________________ Datasheet * Low noise ( Fmin = 1.4 dB @ 4 GHz ) * High gain ( 11.5 dB typ. @ 4 GHz ) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation E...

Siemens Semiconductor Group

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