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2SB1261

Part Number	2SB1261
Manufacturer	LGE
Description	PNP Transistor
Published	Sep 1, 2016
Detailed Description	2SB1261 Transistor(PNP) 1. BASE 1 2. COLLECTOR 3. EMITTER TO-252-2L Features High hFE hFE=100 to 400 Low vCE(sat)...
Datasheet	2SB1261 PDF File

Overview

2SB1261 Transistor(PNP) 1.
BASE 1 2.
COLLECTOR 3.
EMITTER TO-252-2L Features High hFE hFE=100 to 400 Low vCE(sat) vCE(sat) ≤0.
3V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -7 IC Collector Current -Continuous -3 PD Collector Power Dissipation 2 TJ Junction Temperature 150 Tstg Storage Temperature -55-150 Units V V V A W ℃ ℃ Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn on Time Switching Time Storage Time Fall Time CLASSIFICATION OF hFE(1) V(BR)CBO V...

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