DatasheetsPDF.com

MTB110P08KJ3

P-Channel Enhancement Mode Power MOSFET

Description

CYStech Electronics Corp. Spec. No. : C123J3 Issued Date : 2016.07.20 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTB110P08KJ3 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C RDS(ON)@VGS=-10V, ID=-5A RDS(ON)@VGS=-4.5V, ID=-3A Features Low Gate Charge Simple Drive Requirement ESD Protected Gate Pb-free Lead Plating & Haloge...

Cystech Electonics

Download MTB110P08KJ3 Datasheet

Similar Datasheet

MTB110P08KJ3 P-Channel Enhancement Mode Power MOSFET - Cystech Electonics
MTB110P08KN3 P-Channel Enhancement Mode MOSFET - Cystech Electonics
MTB110P08KN6 P-Channel Enhancement Mode Power MOSFET - Cystech Electonics

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)