N-Channel enhancement mode power field effect transistors
Description
Main Product Characteristics
VDSS RDS(on)
200V 0.13Ω(typ.)
ID 18A ①
Features and Benefits
TO-220F
Advanced Process Technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSPL2015F
Marking and Pin Ass...
