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SSF3611E

Silikron Semiconductor
Part Number SSF3611E
Manufacturer Silikron Semiconductor
Description MOSFET
Published Sep 22, 2016
Detailed Description                                  Main Product Characteristics: VDSS -30 V RDS(on) 10.6 mΩ(typ.) ID -12A Features and...
Datasheet PDF File SSF3611E PDF File

SSF3611E
SSF3611E

Overview
                                 Main Product Characteristics: VDSS -30 V RDS(on) 10.
6 mΩ(typ.
) ID -12A Features and Benefits: SOP-8  „ Advanced trench MOSFET process technology „ Special designed for PWM, load switching and general purpose applications „ Ultra low on-resistance with low gate charge „ Fast switching and reverse body recovery „ 150℃ operating temperature SSF3611E    Marking and pin Assignment  Schematic diagram        Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications  Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max.
-12 -7.
4 -48 2 -30 ± 20 -55 to +150 Units A W V V °C Thermal Resistance Symbol Characterizes RθJA Junction-to-ambient (t ≤ 10s) ④ ©Silikron Semiconductor CO.
,LTD.
2011.
05.
25 www.
silikron.
com  Typ.
— Max.
62.
5 Units ℃/W Version : 1.
0 page 1 of 6                                  Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Min.
－30 — — －1 — —  —  —  —  —  —  —  —  —  —  —  —  Typ.
— 10.
6 14.
1 — — —  —  55 3.
5 ...


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