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2N6050

Inchange Semiconductor
Part Number 2N6050
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistors
Published Oct 14, 2016
Detailed Description INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6050 DESCRIPTION ·Built-in Base-Emitter Shunt R...
Datasheet PDF File 2N6050 PDF File

2N6050
2N6050

Overview
INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor 2N6050 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain ·Complement to type 2N6057 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -12 A ICM Collector Current-Peak -20 A IB Base Current -0.
2 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature Tstg Storage Temperature 150 -65~150 ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c ThermalResistance, Junction to Case MAX 1.
17 UNIT ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlingtion Pow...


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