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2N6051

Inchange Semiconductor
Part Number 2N6051
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistors
Published Oct 14, 2016
Detailed Description INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor isc Product Specification 2N6051 DESCRIPTION ·Buil...
Datasheet PDF File 2N6051 PDF File

2N6051
2N6051

Overview
INCHANGE Semiconductor isc Silicon PNP Darlingtion Power Transistor isc Product Specification 2N6051 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = -6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= -80V(Min) ·Complement to type 2N6058 APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -12 A ICM Collector Current-Peak -20 A IB Base Current -0.
2 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c ThermalResistance, Junction to Case MAX 1.
17 UNIT ℃/W isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor is...


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