P-Channel Enhancement Mode Field Effect Transistor
Description
CJ3401A
SOT-23 Plastic-Encapsulate MOSFETS
CJ3401A P-Channel Enhancement Mode Field Effect Transistor
FEATURE z High dense cell design for extremely low RDS(ON). z Exceptional on-resistance and maximum DC current capability
MARKING: R1A
SOT-23
1. GATE 2. SOURCE 3. DRAIN
G
D S
Maximum ratings ( Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Vol...
Similar Datasheet
