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MTBA6C15H8

P- & N-Channel Enhancement Mode Power MOSFET

Description

CYStech Electronics Corp. Spec. No. : C938H8 Issued Date : 2016.09.06 Revised Date : 2018.04.16 Page No. : 1/14 N- And P-Channel Enhancement Mode MOSFET MTBA6C15H8 BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) Features Simple drive requirement Low on-resistance Fast switching speed Pb-...

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