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MSC8205S

Part Number	MSC8205S
Manufacturer	MORESEMI
Description	Dual N-Channel Enhancement Mode Power MOS FET
Published	Oct 29, 2016
Detailed Description	MSC8205S 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID = 6A RDS(ON) <37mΩ @ VG...
Datasheet	MSC8205S PDF File

Overview

MSC8205S 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID = 6A RDS(ON) <37mΩ @ VGS=2.
5V RDS(ON) < 27mΩ @ VGS=4.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Battery protection ● Load switch ● Power management PIN Configuration Lead Free Marking and pin assignment SOT-23-6L top view D1 G1 G2 D2 S1 S2 Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package 8205 MSC8205S SOT-23-6L Reel Size Ø180mm Tape width 8mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 20 ±10 6 25 1.
25 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistanc...

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