Silicon NPN Power Transistor
Description
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BUL128DB
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.) ·Low Collector Saturation Voltage
: VCE(sat) = 0.7V(Max) @ IC= 0.5A ·Very High Switching Speed
APPLICATIONS ·Designed for electronic ballasts for fluorescent lighting.
ABSOLUTE MAXIMUM RATIN...
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