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BUL128

Part Number	BUL128
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Sep 8, 2020
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor BUL128 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCE...
Datasheet	BUL128 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor BUL128 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.
) ·Low Collector Saturation Voltage : VCE(sat) = 0.
7V(Max) @ IC= 0.
5A ·Very High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in lighting applications and low cost switch- mode power supplies.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 4 A ICM Collector Current-peak tp<5ms 8 A IB Base Current-C...

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