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BUL128D

Part Number	BUL128D
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 15, 2016
Detailed Description	Inchange Semiconductor Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage ,high speed ·Integ...
Datasheet	BUL128D PDF File

Overview

Inchange Semiconductor Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage ,high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies.
PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICM Collector current-Peak (tp<5 ms) IB Base current IBM Base current-Peak (tp<5 ms) PT Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-C Thermal resistance from junction to case Product Specification BUL128D · VALUE 700 400 9 4 8 2 4 70 150 -65~150 UNIT V V V A A A A W ℃ ℃ VALUE 1.
78 UNIT ℃/W Inchange Semiconductor Silicon N...

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