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2SB1202

Part Number	2SB1202
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Nov 18, 2016
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Large current capacitance and wide ASO ·Low collector-to-emitter saturati...
Datasheet	2SB1202 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Large current capacitance and wide ASO ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Voltage regulators,relay drivers,lamp drivers, electrical equipment ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -3 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature -...

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