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2SB1203

Part Number	2SB1203
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Nov 18, 2016
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·High current and high fT ·Low collector-to-emitter saturation voltage ·Ex...
Datasheet	2SB1203 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·High current and high fT ·Low collector-to-emitter saturation voltage ·Excellent linearity of hFE ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -5 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dis...

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