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2SC3754

Part Number	2SC3754
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 18, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Wide Area of Safe Operation ·High Breakdown Voltage- : V(BR)CBO= 1500V(Mi...
Datasheet	2SC3754 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Wide Area of Safe Operation ·High Breakdown Voltage- : V(BR)CBO= 1500V(Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Pulse 12 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 2 A 60 W 150 ℃ Tstg S...

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