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MRF559

Part Number	MRF559
Manufacturer	Advanced Power Technology
Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Published	Dec 11, 2016
Detailed Description	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF559 MRF559G * G Denotes RoHS Complaint, Pb Free Terminal Finish Featu...
Datasheet	MRF559 PDF File

Overview

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF559 MRF559G * G Denotes RoHS Complaint, Pb Free Terminal Finish Features • Specified @ 12.
5 V, 870 MHz Characteristics • Output Power = .
5 W • Minimum Gain = 8.
0 dB • Efficiency 50% • Cost Effective Macro X Package • Electroless Tin Plated Leads for Improved Solderability Macro X DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCEO Collector-Emitter Voltage VCBO Collector-Base Voltage VEBO Emitter-Base Voltage IC Collector Current Thermal Data P D Tstg Total Device Dissipation @ TC = 75ºC Derate above 75ºC Storage Temperature R...

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