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C5906

Toshiba
Part Number C5906
Manufacturer Toshiba
Description Silicon NPN Transistor
Published Dec 30, 2016
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5906 High-Speed Switching Applications DC-DC Converter Applications Str...
Datasheet PDF File C5906 PDF File

C5906
C5906

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5906 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5906 Unit: mm • High DC current gain: hFE = 200 to 500 (IC = 0.
5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.
2 V (max) • High-speed switching: tf = 25 ns (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation DC t = 10 s Junction temperature Storage temperature range VCBO VCEX VCEO VEBO IC ICP IB PC (Note 1) Tj Tstg 50 50 30 7 4 7 0.
4 0.
8 1.
25 150 −55 to 150 V V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-3S1C Weight: 0.
01 g (typ.
) Note 1: Mounted on an FR4 board (glass epoxy, 1.
6 mm thick, Cu area: 645 mm2) Note 2: Using continuously under heavy loads (e.
g.
the application of high temperature/current/vol...


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