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PB210BC

UNIKC
Part Number PB210BC
Manufacturer UNIKC
Description N-Channel MOSFET
Published Feb 2, 2017
Detailed Description PB210BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 240mΩ @VGS = 10V ID 2.2A SOT-89 ...
Datasheet PDF File PB210BC PDF File

PB210BC
PB210BC

Overview
PB210BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 240mΩ @VGS = 10V ID 2.
2A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C ID IDM 2.
2 1.
8 8 Avalanche Current IAS 6 Avalanche Energy L = 1mH EAS 18 Power Dissipation TA = 25 °C TA = 100 °C PD 2.
5 1.
6 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 RqJA 50 Junction-to-Case RqJC 10 1Pulse width limited by maximum junction temperature.
2 The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C.
UNITS °C / W REV 1.
0 1 2015/5/26 PB210BC N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = ...


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