PB210BV
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
230mΩ @VGS = 10V
ID 2. 1A
SOP-8
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current1 Pulsed Drain Current2
TA = 25 °C TA = 70 °C
ID IDM
2. 1 1. 7 17
Avalanche Current
IAS 17
Avalanche Energy
L =0. 1mH
EAS
15. 4
Power Dissipation
TA= 25 °C TA =70 °C
PD
2. 3 1. 5
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS V
A
mJ W °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case 1Pulse width limited by maximum junction ...